Welcome to ichome.com!

logo
Home

SI7112DN-T1-GE3

SI7112DN-T1-GE3

SI7112DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 11.3A PPAK1212-8

non-compliant

SI7112DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.76358 -
6,000 $0.72773 -
15,000 $0.70212 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

R6511KNXC7G
BSS138
BSS138
$0 $/piece
SUG90090E-GE3
RM20N650T2
RM20N650T2
$0 $/piece
SCT040H65G3AG
SIHF9520S-GE3
FQPF6P25
2N7002WT1G
2N7002WT1G
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.