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SUG90090E-GE3

SUG90090E-GE3

SUG90090E-GE3

Vishay Siliconix

MOSFET N-CH 200V 100A TO247AC

non-compliant

SUG90090E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $3.04212 $1521.06
1,000 $2.59038 -
2,500 $2.46876 -
33 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 129 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 100 V
FET Feature -
Power Dissipation (Max) 395W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
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