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SI7106DN-T1-GE3

SI7106DN-T1-GE3

SI7106DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 12.5A PPAK1212-8

non-compliant

SI7106DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.61041 -
6,000 $0.58175 -
15,000 $0.56128 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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