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SIDR170DP-T1-RE3

SIDR170DP-T1-RE3

SIDR170DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 23.2A/95A PPAK

non-compliant

SIDR170DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.71000 $2.71
500 $2.6829 $1341.45
1000 $2.6558 $2655.8
1500 $2.6287 $3943.05
2000 $2.6016 $5203.2
2500 $2.5745 $6436.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 23.2A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6195 pF @ 50 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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