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SI5935CDC-T1-GE3

SI5935CDC-T1-GE3

SI5935CDC-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4A 1206-8

non-compliant

SI5935CDC-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21660 -
6,000 $0.20340 -
15,000 $0.19020 -
30,000 $0.18096 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 100mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 10V
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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