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EPC2101

EPC2101

EPC2101

EPC

GAN TRANS ASYMMETRICAL HALF BRID

non-compliant

EPC2101 Pricing & Ordering

Quantity Unit Price Ext. Price
500 $4.77400 $2387
1,000 $4.31200 -
193 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V, 1200pF @ 30V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
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