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SI5513DC-T1-GE3

SI5513DC-T1-GE3

SI5513DC-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 3.1A 1206-8

non-compliant

SI5513DC-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.1A, 2.1A
Rds On (Max) @ Id, Vgs 75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
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