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SI4500BDY-T1-GE3

SI4500BDY-T1-GE3

SI4500BDY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8-SOIC

compliant

SI4500BDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.6A, 3.8A
Rds On (Max) @ Id, Vgs 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.3W
Operating Temperature -
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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