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SI4890DY-T1-E3

SI4890DY-T1-E3

SI4890DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

compliant

SI4890DY-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.50575 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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