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SI4866DY-T1-GE3

SI4866DY-T1-GE3

SI4866DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 11A 8SO

compliant

SI4866DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.12535 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 17A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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