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SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 60V 4.7A 8SO

SOT-23

non-compliant

SI9407BDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.43739 -
5,000 $0.41685 -
12,500 $0.40218 -
25,000 $0.40005 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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