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SI4776DY-T1-GE3

SI4776DY-T1-GE3

SI4776DY-T1-GE3

Vishay Siliconix

MOSFET N-CHANNEL 30V 11.9A 8SO

non-compliant

SI4776DY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.24368 -
5,000 $0.22883 -
1146 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 11.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 521 pF @ 15 V
FET Feature -
Power Dissipation (Max) 4.1W (Tc)
Operating Temperature -55°C ~ 150°C (TA)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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