Welcome to ichome.com!

logo
Home

SIR632DP-T1-RE3

SIR632DP-T1-RE3

SIR632DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 150V 29A PPAK SO-8

compliant

SIR632DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.65764 -
6,000 $0.62676 -
15,000 $0.60471 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 34.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 7.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 75 V
FET Feature -
Power Dissipation (Max) 69.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

NVMFS5C604NLWFAFT3G
NVMFS5C604NLWFAFT3G
$0 $/piece
DMG2305UXQ-13
STD180N4F6
SIA427DJ-T1-GE3
STL24N60M2
FDN537N
FDN537N
$0 $/piece
APT38M50J
STP13N60M2
NTHL020N120SC1
NTHL020N120SC1
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.