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SI4463CDY-T1-GE3

SI4463CDY-T1-GE3

SI4463CDY-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 13.6A/49A 8SO

compliant

SI4463CDY-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.44280 -
5,000 $0.42201 -
12,500 $0.40716 -
25,000 $0.40500 -
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 13.6A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4250 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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