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IPN70R360P7SATMA1

IPN70R360P7SATMA1

IPN70R360P7SATMA1

MOSFET N-CH 700V 12.5A SOT223

non-compliant

IPN70R360P7SATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.47506 -
6,000 $0.45391 -
15,000 $0.43881 -
3000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 16.4 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 517 pF @ 400 V
FET Feature -
Power Dissipation (Max) 7.2W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
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