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SI4448DY-T1-GE3

SI4448DY-T1-GE3

SI4448DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 50A 8SO

non-compliant

SI4448DY-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 12350 pF @ 6 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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SI4845DY-T1-E3

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