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FDS4435

FDS4435

FDS4435

onsemi

MOSFET P-CH 30V 8.8A 8SOIC

compliant

FDS4435 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 5 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1604 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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