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SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 4.1A 6TSOP

non-compliant

SI3458BDV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38985 -
6,000 $0.36455 -
15,000 $0.35190 -
30,000 $0.34500 -
1560 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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