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SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

SIRC10DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

non-compliant

SIRC10DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38885 -
6,000 $0.36941 -
15,000 $0.35552 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1873 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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