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SI3458BDV-T1-E3

SI3458BDV-T1-E3

SI3458BDV-T1-E3

Vishay Siliconix

MOSFET N-CH 60V 4.1A 6TSOP

SOT-23

non-compliant

SI3458BDV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38985 -
6,000 $0.36455 -
15,000 $0.35190 -
30,000 $0.34500 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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