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PMPB100ENEX

PMPB100ENEX

PMPB100ENEX

Nexperia USA Inc.

MOSFET DFN2020MD-6

SOT-23

non-compliant

PMPB100ENEX Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16107 -
6,000 $0.15249 -
15,000 $0.14391 -
30,000 $0.13361 -
75,000 $0.12932 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 72mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
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