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SI3442BDV-T1-GE3

SI3442BDV-T1-GE3

SI3442BDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 3A 6TSOP

compliant

SI3442BDV-T1-GE3 Pricing & Ordering

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3,000 $0.23925 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 10 V
FET Feature -
Power Dissipation (Max) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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