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HTNFET-T

HTNFET-T

HTNFET-T

Honeywell Aerospace

MOSFET N-CH 55V 4POWER TAB

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HTNFET-T Pricing & Ordering

Quantity Unit Price Ext. Price
1 $434.00000 $434
2 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Vgs (Max) 10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
FET Feature -
Power Dissipation (Max) 50W (Tj)
Operating Temperature -55°C ~ 225°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-Power Tab
Package / Case 4-SIP
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