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SI2336DS-T1-GE3

SI2336DS-T1-GE3

SI2336DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 5.2A SOT23-3

non-compliant

SI2336DS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19855 -
6,000 $0.18645 -
15,000 $0.17435 -
30,000 $0.16588 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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