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BSZ12DN20NS3GATMA1

BSZ12DN20NS3GATMA1

BSZ12DN20NS3GATMA1

MOSFET N-CH 200V 11.3A 8TSDSON

compliant

BSZ12DN20NS3GATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
5,000 $0.52229 -
10,000 $0.50266 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
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