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SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 40V 4.4A SOT23-3

non-compliant

SI2319CDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.22563 -
6,000 $0.21188 -
15,000 $0.19813 -
30,000 $0.18850 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 77mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 595 pF @ 20 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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