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IPB031N08N5ATMA1

IPB031N08N5ATMA1

IPB031N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

non-compliant

IPB031N08N5ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $1.61854 -
2,000 $1.53762 -
5,000 $1.47981 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6240 pF @ 40 V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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