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SI1065X-T1-GE3

SI1065X-T1-GE3

SI1065X-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 1.18A SC89-6

compliant

SI1065X-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1.18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 6 V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
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