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SI1065X-T1-GE3

SI1065X-T1-GE3

SI1065X-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 1.18A SC89-6

non-compliant

SI1065X-T1-GE3 Pricing & Ordering

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500 $0 $0
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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1.18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 6 V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
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