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IPU06N03LB G

IPU06N03LB G

IPU06N03LB G

MOSFET N-CH 30V 50A TO251-3

non-compliant

IPU06N03LB G Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 15 V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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