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Name | Value |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | GaNFET (Cascode Gallium Nitride FET) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 72mOhm @ 17A, 8V |
Vgs(th) (Max) @ Id | 2.6V @ 400uA |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
Vgs (Max) | ±18V |
Input Capacitance (Ciss) (Max) @ Vds | 1130 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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