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TPS1100DR

TPS1100DR

TPS1100DR

Texas Instruments

MOSFET P-CH 15V 1.6A 8SOIC

compliant

TPS1100DR Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.64680 -
564 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 15 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.45 nC @ 10 V
Vgs (Max) +2V, -15V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 791mW (Ta)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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