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TP65H070LSG-TR

TP65H070LSG-TR

TP65H070LSG-TR

Transphorm

GANFET N-CH 650V 25A PQFN88

compliant

TP65H070LSG-TR Pricing & Ordering

Quantity Unit Price Ext. Price
1 $13.74000 $13.74
500 $13.6026 $6801.3
1000 $13.4652 $13465.2
1500 $13.3278 $19991.7
2000 $13.1904 $26380.8
2500 $13.053 $32632.5
9810 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerDFN
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