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IPL65R099C7AUMA1

IPL65R099C7AUMA1

IPL65R099C7AUMA1

MOSFET N-CH 650V 21A 4VSON

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IPL65R099C7AUMA1 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 400 V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-VSON-4
Package / Case 4-PowerTSFN
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