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TK31V60W,LVQ

TK31V60W,LVQ

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

non-compliant

TK31V60W,LVQ Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 240W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)
Package / Case 4-VSFN Exposed Pad
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