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Name | Value |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 17.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 200mOhm @ 8.7A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
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