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RFD16N05LSM

RFD16N05LSM

RFD16N05LSM

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

RFD16N05LSM Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.55000 $0.55
500 $0.5445 $272.25
1000 $0.539 $539
1500 $0.5335 $800.25
2000 $0.528 $1056
2500 $0.5225 $1306.25
3631 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
Vgs(th) (Max) @ Id 2V @ 250mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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