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STQ2LN60K3-AP

STQ2LN60K3-AP

STQ2LN60K3-AP

STMicroelectronics

MOSFET N-CH 600V 600MA TO92-3

non-compliant

STQ2LN60K3-AP Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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