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NTLJF3117PT1G

NTLJF3117PT1G

NTLJF3117PT1G

onsemi

MOSFET P-CH 20V 2.3A 6WDFN

non-compliant

NTLJF3117PT1G Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.21449 -
6,000 $0.20065 -
15,000 $0.18681 -
30,000 $0.17713 -
31000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 531 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad
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