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STI18N65M2

STI18N65M2

STI18N65M2

STMicroelectronics

MOSFET N-CH 650V 12A I2PAK

non-compliant

STI18N65M2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.37000 $2.37
50 $1.91120 $95.56
100 $1.72010 $172.01
500 $1.33788 $668.94
1,000 $1.10853 -
2,500 $1.03208 -
5,000 $0.99385 -
839 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 100 V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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