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SI7858BDP-T1-GE3

SI7858BDP-T1-GE3

SI7858BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 40A PPAK SO-8

non-compliant

SI7858BDP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.78720 -
6,000 $0.75024 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5760 pF @ 6 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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