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STH260N6F6-2

STH260N6F6-2

STH260N6F6-2

STMicroelectronics

MOSFET N-CH 60V 180A H2PAK-2

compliant

STH260N6F6-2 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $3.69600 -
2,000 $3.51120 -
9 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 183 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package H2Pak-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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