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ES6U1T2R

ES6U1T2R

ES6U1T2R

Rohm Semiconductor

MOSFET P-CH 12V 1.3A 6WEMT

compliant

ES6U1T2R Pricing & Ordering

Quantity Unit Price Ext. Price
8,000 $0.13340 -
16,000 $0.12880 -
8330 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 6 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WEMT
Package / Case 6-SMD, Flat Leads
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