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STB57N65M5

STB57N65M5

STB57N65M5

STMicroelectronics

MOSFET N-CH 650V 42A D2PAK

non-compliant

STB57N65M5 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 63mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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