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STB33N60M2

STB33N60M2

STB33N60M2

STMicroelectronics

MOSFET N-CH 600V 26A D2PAK

non-compliant

STB33N60M2 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $2.42200 -
2,000 $2.31420 -
5,000 $2.23720 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 100 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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