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SI1416EDH-T1-GE3

SI1416EDH-T1-GE3

SI1416EDH-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.9A SOT-363

non-compliant

SI1416EDH-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.14746 -
6,000 $0.13899 -
15,000 $0.13052 -
30,000 $0.12035 -
75,000 $0.11612 -
0 items
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 2.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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