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STB33N60DM6

STB33N60DM6

STB33N60DM6

STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

compliant

STB33N60DM6 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.90000 $5.9
500 $5.841 $2920.5
1000 $5.782 $5782
1500 $5.723 $8584.5
2000 $5.664 $11328
2500 $5.605 $14012.5
591 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 128mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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