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STB28NM60ND

STB28NM60ND

STB28NM60ND

STMicroelectronics

MOSFET N-CH 600V 23A D2PAK

non-compliant

STB28NM60ND Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $4.68665 -
2,000 $4.53276 -
449 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 100 V
FET Feature -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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