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FDT86113LZ

FDT86113LZ

FDT86113LZ

onsemi

MOSFET N-CH 100V 3.3A SOT223-4

compliant

FDT86113LZ Pricing & Ordering

Quantity Unit Price Ext. Price
4,000 $0.31900 -
8,000 $0.29700 -
12,000 $0.28600 -
28,000 $0.28000 -
21081 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4
Package / Case TO-261-4, TO-261AA
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