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RS1P600BETB1

RS1P600BETB1

RS1P600BETB1

Rohm Semiconductor

MOSFET N-CH 100V 17.5A/60A 8HSOP

compliant

RS1P600BETB1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $1.22584 -
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Name Value
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 50 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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