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SI4410DY,518

SI4410DY,518

SI4410DY,518

NXP USA Inc.

MOSFET N-CH 30V 8SO

non-compliant

SI4410DY,518 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.31000 $0.31
500 $0.3069 $153.45
1000 $0.3038 $303.8
1500 $0.3007 $451.05
2000 $0.2976 $595.2
2500 $0.2945 $736.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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